1/4 october, 5 2001 MSC81400M rf & microwave transistors avionics applications ? refractory/gold metallization ? ruggedized vswr 25:1 ? internal input/output matching ? low thermal resistance ? metal/ceramic hermetic package ? p out = 400 w min. with 6.4 db gain description the MSC81400M "super power" transistor is a high peak pulse power device specifically de- signed for dme/tacan avionics applications. this device is capable of withstanding a minimum 25:1 load mismatch condition at any phase angle under full rated conditions. the MSC81400M is housed in the unique big- pac? hermetic metal/ceramic package with internal input/output matching structures. pin connection 1 3 42 1. collector 2. base 3. emitter 4. base so38 hermetically sealed order code MSC81400M branding 81400m absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation * (t c 80 c ) 1000 w i c device current * 28 a v cc collector-supply voltage * 55 v t j junction temperature (pulsed rf operation) 250 c t stg storage temperature - 65 to +200 c thermal data r th(j-c) junction -case thermal resistance * 0.12 c/w * applies only to rated rf amplifier operation
MSC81400M 2/4 electrical specification (t case = 25 c) static dynamic symbol test conditions min. typ. max. unit bv cbo i c = 15ma i e = 0ma 65 v bv ebo i c = 0ma i e = 1ma 3.5 v bv cer i c = 50ma r be = 10 w 65 v i ces v ce = 50v 35 ma h fe v ce = 5v i c = 1a 15 120 symbol test conditions min. typ. max. unit p out f = 1025 - 1150mhz v cc = 50v 400 450 w g p f = 1025 - 1150mhz p out = 400 w v cc = 50v 6.4 db h c f = 1025 - 1150mhz p out = 400 w v cc = 50v 35 40 % note: pulse width = 10 m sec duty cycle = 1% test circuit all dimensions are in inches. ref.: dwg. no. c125363
3/4 MSC81400M ref.: 1011415b so38 (.400 x .500 2/l herm. w/flg.) mechanical data mm inch min. typ. max min. typ. max a 3.43 3.68 0.135 0.145 b 2.54 3.05 0.100 0.120 c 1.27 0.050 d 9.55 10.06 0.376 0.396 e 2.79 3.30 0.110 0.130 f 10.03 10.34 0.395 0.407 g 4.90 0.193 h 12.45 12.95 0.490 0.510 i 2.54 0.100 j 17.53 18.03 0.690 0.710 k 22.61 23.11 0.890 0.910 l 0.08 0.15 0.003 0.006 m 1.32 1.83 0.052 0.072 n 2.84 3.35 0.112 0.132 p 5.84 0.230 dim.
MSC81400M 4/4 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2001 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
|
